China's Ministry of Industry and Information Technology Proposes New Photovoltaic Manufacturing Industry Specifications
TapTechNews July 9th news, the Ministry of Industry and Information Technology released an announcement today, publicly soliciting opinions on the 'Specification Conditions for the Photovoltaic Manufacturing Industry (2024 Edition)' and the 'Administrative Measures for the Specification Announcement of the Photovoltaic Manufacturing Industry (2024 Edition)' (draft for comments).
In the 'Specification Conditions for the Photovoltaic Manufacturing Industry (2024 Edition)' (draft for comments), it is mentioned that guide photovoltaic enterprises to reduce photovoltaic manufacturing projects that simply expand production capacity, strengthen technological innovation, improve product quality, and reduce production costs. The minimum capital ratio for new and renovated and expanded photovoltaic manufacturing projects is 30%.
TapTechNews noted that in the 'Specification Conditions for the Photovoltaic Manufacturing Industry (2024 Edition)' (draft for comments), it is pointed out that the power consumption of photovoltaic manufacturing projects should meet the following requirements:
For existing polysilicon projects, the reduction power consumption is less than 46 kilowatt-hours per kilogram, and the comprehensive power consumption is less than 60 kilowatt-hours per kilogram; for new and renovated and expanded projects, the reduction power consumption is less than 44 kilowatt-hours per kilogram, and the comprehensive power consumption is less than 57 kilowatt-hours per kilogram.
For existing silicon ingot projects, the average comprehensive power consumption is less than 7.5 kilowatt-hours per kilogram, and for new and renovated and expanded projects, it is less than 6.5 kilowatt-hours per kilogram; if a multi-crystalline ingot furnace is used to produce quasi-single crystal or high-efficiency multi-crystalline products, the increase in the average comprehensive power consumption of the project must not exceed 0.5 kilowatt-hours per kilogram.
For existing silicon rod projects, the average comprehensive power consumption is less than 26 kilowatt-hours per kilogram, and for new and renovated and expanded projects, it is less than 23 kilowatt-hours per kilogram.
For existing multi-crystalline silicon wafer projects, the average comprehensive power consumption is less than 250,000 watt-hours per million wafers, and for new and renovated and expanded projects, it is less than 200,000 watt-hours per million wafers; for existing single-crystalline silicon wafer projects, the average comprehensive power consumption is less than 100,000 watt-hours per million wafers, and for new and renovated and expanded projects, it is less than 80,000 watt-hours per million wafers.
For P-type crystalline silicon battery projects, the average comprehensive power consumption is less than 50,000 watt-hours per MWp, and for N-type crystalline silicon battery projects, the average comprehensive power consumption is less than 70,000 watt-hours per MWp.
For crystalline silicon module projects, the average comprehensive power consumption is less than 25,000 watt-hours per MWp, and for thin-film module projects, the average power consumption is less than 400,000 watt-hours per MWp.
The 'Specification Conditions for the Photovoltaic Manufacturing Industry (2024 Edition)' (draft for comments) also mentioned that the products of new and renovated enterprises and projects should meet the following requirements:
Polysilicon meets the requirements of grade 3 or above of 'Electronic Grade Polysilicon' (GB/T 12963) or the requirements of sup er grade of 'Fluidized Bed Method Granular Silicon' (GB/T 35307).
For multi-crystalline silicon wafers (including quasi-single crystalline wafers), the minority carrier lifetime is not less than 2.5 microseconds, and the carbon and oxygen contents are less than 6 parts per million atomic (ppma) and 8 ppma respectively; for P-type single-crystalline wafers, the minority carrier lifetime is not less than 90 microseconds, and the N-type single-crystalline wafer has a minority carrier lifetime of not less than 1000 microseconds, and the carbon and oxygen contents are less than 1 ppma and 12 ppma respectively, among which the N-type single-crystalline wafer for heterojunction cells has a minority carrier lifetime of not less than 700 microseconds, and the carbon and oxygen contents are less than 1 ppma and 14 ppma respectively.
The average photoelectric conversion efficiency of polysilicon batteries, P-type single-crystalline silicon batteries, and N-type single-crystalline silicon batteries (calculated based on the front efficiency for double-sided batteries) is not less than 21.7%, 23.7%, and 26% respectively.
The average photoelectric conversion efficiency of polysilicon modules, P-type single-crystalline silicon modules, and N-type single-crystalline silicon modules (calculated based on the front efficiency for double-sided modules) is not less than 19.7%, 21.8%, and 23.1% respectively. The average photoelectric conversion efficiency of CIGS, CdTe, and other thin-film modules is not less than 16%, 16.5%, and 15% respectively.